GS. Tho Duc Nguyen, Đại học Georgia, USA sẽ có buổi seminar với chủ đề: “Rapid Optical and Electrical Sensing of Hydrogen Using Templated Control of Nano-hydride Geometry and Magnetic Composition” (xem tóm tắt đính kèm).
Thời gian: 9h00 ngày thứ Tư (5/7/2023)
Địa điểm: phòng họp Viện Vật lý kỹ thuật, ĐHBK Hà Nội, C10-115
Trân trọng kính mời các thầy cô, học viên sau đại học và sinh viên quan tâm tham dự.
Rapid Optical and Electrical Sensing of Hydrogen Using Templated Control ofNano-hydride Geometry and Magnetic Composition
Dr. Tho Duc Nguyen
Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602, USA.
Email address: ngtho@uga.edu
Abstract
The use of hydrogen (H2) fuel as a clean and renewable alternative is one of the most practical solutions for the already serious fossil-fuel shortages, global climate change, and air pollution. However, significant challenges remain with respect to the safe deployment of H2 fuel sources because H2 is the smallest molecule, is extremely prone to leaks, and has relatively low ignition energy in a broad flammability range. Unfortunately, particularly robust sensors for H2 leak detection and concentration monitoring has not been achieved. This is a serious barrier preventing its widespread adoption. To this end, we have developed a class of lightweight optical1,2, magneto-optical3, and electrical H2 nano-sensors4 based on a metasurface of PdCo alloy nano-patchy particle or nano-hole arrays. The sensing nano-arrays was fabricated utilizing the nano-lithography in combination with the glancing angle co-deposition (GLACD). The structure of the sensors are readily nano-engineered to yield extraordinarily rapid response to H2 gas (~1 s or less at 1 mbar H2 partial pressure) with a high degree of accuracy (<5%), a limit of detection (LOD) of 1 ppm or lower, and strong resistance to humidity (<90%) and other interference gases. The superior performance of our sensor places it among the fastest and most sensitive optical and electrical H2 sensors. We note that although metal oxide semiconductors (MOSs) hydrogen gas sensors might possess a fast response and a low LOD, this is not a favorable technology for hydrogen sensor because they always need to operate at an elevated temperature (~300°C).
References: (1) H. M. Luong et al. Nature Communications 12, 2414 (2021). (2) H. M. Luong et al. Nano Energy, 71, 104558 (2020). (3) H. M. Luong, et al. Nano Energy, 109, 108332 (2023). (4) M. T. Pham et al. ACS Applied Nano Materials 4 (4), 3664-3674 (2021)
English